Short-channel GaN/AlGaN doped channel heterostructurefieldeffect transistors with 36.1 cutoff frequency
- 15 February 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (4) , 357-358
- https://doi.org/10.1049/el:19960206
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °CApplied Physics Letters, 1995
- Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistorApplied Physics Letters, 1994
- AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure field effect transistorsIEEE Transactions on Electron Devices, 1990