Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
- 29 August 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (9) , 1121-1123
- https://doi.org/10.1063/1.112116
Abstract
We fabricated a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) limited by the source series resistance. The device exhibited an excellent pinch‐off and a low parasitic output conductance in the saturation regime. We measured the cutoff frequency fT and the maximum oscillation frequency fmax as 11 and 35 GHz, respectively. These values are superior to the highest reported values for field effect transistors based on other wide band‐gap semiconductors such as SiC. These results demonstrate an excellent potential of AlGaN/GaN HFETs for microwave and millimeter wave applications.Keywords
This publication has 4 references indexed in Scilit:
- High electron mobility transistor based on a GaN-AlxGa1−xN heterojunctionApplied Physics Letters, 1993
- Monte Carlo simulation of electron transport in gallium nitrideJournal of Applied Physics, 1993
- Metal semiconductor field effect transistor based on single crystal GaNApplied Physics Letters, 1993
- Monte Carlo calculation of the velocity-field relationship for gallium nitrideApplied Physics Letters, 1975