Metal semiconductor field effect transistor based on single crystal GaN
- 12 April 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (15) , 1786-1787
- https://doi.org/10.1063/1.109549
Abstract
In this letter we report the fabrication and characterization of a metal semiconductor field effect transistor (MESFET) based on single crystal GaN. The GaN layer was deposited over sapphire substrate using low pressure metalorganic chemical vapor deposition. MESFET devices were fabricated on isolated mesas using TiAu for the source and drain ohmic contacts and silver for the gate Schottky. For devices with a gate length of 4 μm (channel opening, i.e., source to drain separation of 10 μm), a transconductance of 23 mS/mm was obtained at −1 V gate bias. Complete pinch‐off was observed for a gate potential of −12 V.Keywords
This publication has 12 references indexed in Scilit:
- Low pressure metalorganic chemical vapor deposition of AIN over sapphire substratesApplied Physics Letters, 1992
- Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-AlxGa1−xN heterojunctionsApplied Physics Letters, 1992
- High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayersApplied Physics Letters, 1992
- Optical characterization of AlGaN-GaN-AlGaN quantum wellsJournal of Electronic Materials, 1992
- Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor depositionApplied Physics Letters, 1992
- High electron mobility GaN/AlxGa1−xN heterostructures grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer LayerJapanese Journal of Applied Physics, 1990
- Electrical properties of n-type vapor-grown gallium nitrideJournal of Physics and Chemistry of Solids, 1973