High electron mobility GaN/AlxGa1−xN heterostructures grown by low-pressure metalorganic chemical vapor deposition
- 27 May 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (21) , 2408-2410
- https://doi.org/10.1063/1.104886
Abstract
In this letter we report the first observation of enhanced electron mobility in GaN/AlxGa1−xN heterojunctions. These structures were deposited on basal plane sapphire using low‐pressure metalorganic chemical vapor deposition. The electron mobility of a single heterojunction composed of 500 Å of Al0.09Ga0.91N deposited onto 0.3 μm of GaN was around 620 cm2/V s at room temperature as compared to 56 cm2/V s for bulk GaN of the same thickness deposited under identical conditions. The mobility for the single heterojunction increased to a value of 1600 cm2/V s at 77 K whereas the mobility of the 0.3 μm GaN layer alone peaked at 62 cm2/V s at 180 K and decreased to 19 cm2/V s at 77 K. A 18‐layer multiple heterojunction structure displayed a peak mobility of 1980 cm2/V s at 77 K.Keywords
This publication has 10 references indexed in Scilit:
- Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wellsApplied Physics Letters, 1990
- Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer LayerJapanese Journal of Applied Physics, 1990
- Application of the Shubnikov-de Haas oscillations in the characterization of Si MOSFET's and GaAs MODFET'sIEEE Transactions on Electron Devices, 1987
- Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1983
- Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxyJournal of Applied Physics, 1982
- Effect of background doping on the electron mobility of (Al,Ga)As/GaAs heterostructuresJournal of Applied Physics, 1981
- High mobility of two-dimensional electrons at the GaAs/n-AlGaAs heterojunction interfaceApplied Physics Letters, 1980
- Electrical properties of n-type vapor-grown gallium nitrideJournal of Physics and Chemistry of Solids, 1973
- Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor SurfacePhysical Review B, 1958