Effect of background doping on the electron mobility of (Al,Ga)As/GaAs heterostructures
- 1 September 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (9) , 5689-5690
- https://doi.org/10.1063/1.329504
Abstract
Selectively doped single period (Al,Ga)As/GaAs heterostructures have been grown by molecular beam epitaxy and characterized by Van der Pauw-Hall measurements. The mobility of the two-dimensional electron gas localized at the heterojunction interface has been examined as a function of background charge concentration in the GaAs layer. The electron mobility has been found to decrease monotonically with increasing background concentration, as predicted by calculations based on a two-dimensional screening factor and remote donor-electron interaction.This publication has 10 references indexed in Scilit:
- Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructuresJournal of Applied Physics, 1981
- High mobility GaAs-Al
x
Ga
1−
x
As single period modulation-doped heterojunctionsElectronics Letters, 1981
- High mobilities in AlxGa1−xAs-GaAs heterojuntionsApplied Physics Letters, 1980
- Alloy Clustering in-GaAs Quantum-Well HeterostructuresPhysical Review Letters, 1980
- Growth conditions to achieve mobility enhancement in Al x Ga 1−x As-GaAs heterojunctions by m.b.e.Electronics Letters, 1980
- Electronic Properties of a Semiconductor Superlattice II. Low Temperature Mobility Perpendicular to the SuperlatticeJournal of the Physics Society Japan, 1980
- Impurity and phonon scattering in layered structuresApplied Physics Letters, 1979
- Two-dimensional electron gas at a semiconductor-semiconductor interfaceSolid State Communications, 1979
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Measurements of kinetic processes in a self-sustained discharge XeF laserApplied Physics Letters, 1978