Wide bandgap semiconductor materials and devices
- 1 October 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 43 (10) , 1633-1636
- https://doi.org/10.1109/16.536807
Abstract
Given a matrix of all semiconductor materials and their properties, the highest and the lowest of these property values will almost always be associated with wide bandgap materials. The many possible combinations of these "poles and zeros" lead not only to superlative electron device performance, but to new device concepts as well. An overview of wide bandgap semiconductor properties is presented followed by several concepts for both new and enhanced devices. Finally, impediments to immediate exploitation and a time-oriented appraisal of the various materials and devices is presented.Keywords
This publication has 11 references indexed in Scilit:
- Physical limitations on frequency and power parameters of transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Low resistivity aluminum nitride: carbon (AlN : C) films grown by metal organic chemical vapor depositionMaterials Letters, 1996
- Experimental demonstration of a buried-channel charge-coupled device in 6H silicon carbideIEEE Electron Device Letters, 1996
- Wide bandgap compound semiconductors for superior high-voltage unipolar power devicesIEEE Transactions on Electron Devices, 1994
- Electronic Structure of Diamond, Silicon Carbide, and the Group-III NitridesMRS Proceedings, 1994
- Conductivity Anisotropy in Epitaxial 6H and 4H SicMRS Proceedings, 1994
- Power semiconductor device figure of merit for high-frequency applicationsIEEE Electron Device Letters, 1989
- Double base hot electron transistorSuperlattices and Microstructures, 1988
- Monte-Carlo Approach of Electron Emission from SiO2Physica Status Solidi (a), 1984
- Figure of merit for semiconductors for high-speed switchesProceedings of the IEEE, 1972