Short-channel Al 0.5 Ga 0.5 N/GaNMODFETs withpower density > 3 W/mm at 18 GHz
- 25 September 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (20) , 1742-1743
- https://doi.org/10.1049/el:19971127
Abstract
The authors have demonstrated 0.25 µm gate-length Al0.5Ga0.5N/GaN MODFETs on sapphire substrates which exhibit CW output power densities > 3 W/mm at 18 GHz, the highest reported to date for microwave FETs in the K band. This confirms the promise of the high Al-content AlGaN/GaN MODFET structure.Keywords
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