Microwave performance of AlGaN/GaN inverted MODFET's
- 1 June 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 18 (6) , 293-295
- https://doi.org/10.1109/55.585363
Abstract
A continuous wave output power of 1.5 W/mm with a power added efficiency of 17.5% has been achieved at 4 GHz in inverted AlGaN/GaN MODFET's (IMODFET's) with 2 μm gate lengths and 78 μm gate widths. The current gain and available power gain cutoff frequencies were 6 and 11 GHz, respectively. We suggest that the input characteristics of GaN-based FET's play an important role in the output power that can be obtained. In the present devices, high transconductance, 100 mS/mm, retained over a 5 V input swing is thought to alleviate the limitations imposed by the input characteristics. Moreover, the buried AlGaN buffer layer is suggested as having assisted in the reduction of the output conductance which aids the power gain.Keywords
This publication has 17 references indexed in Scilit:
- Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation-doped field-effect transistorsApplied Physics Letters, 1996
- Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field-effect transistorsApplied Physics Letters, 1996
- 75 Å GaN channel modulation doped field effect transistorsApplied Physics Letters, 1996
- Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopyApplied Physics Letters, 1996
- Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopyApplied Physics Letters, 1994
- The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structureJournal of Applied Physics, 1993
- Strain-generated electric fields in [111] growth axis strained-layer superlatticesSolid State Communications, 1986
- Submicron gate GaAs/Al0.3Ga0.7AS MESFET's with extremely sharp interfaces (40 Å)IEEE Transactions on Electron Devices, 1982
- Influence of AlxGa1−xAs buffer layers on the performance of modulation-doped field-effect transistorsApplied Physics Letters, 1982
- Performance of Inverted Structure Modulation Doped Schottky Barrier Field Effect TransistorsJapanese Journal of Applied Physics, 1982