Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors
- 1 July 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 17 (7) , 325-327
- https://doi.org/10.1109/55.506356
Abstract
We report on the microwave operation of 1 μm gate AlGaN/GaN doped channel heterostructure field effect transistors (DC-HFET's) with the cutoff frequency f T of 18.3 GHz. These devices exhibit the cutoff frequency-gate length product in excess of 18 GHz/spl middot/μm, comparable to that of the state-of-the-art GaAs MESFET's. We explain these improvements in the device performance by the increased sheet carrier density in the device channel and by a reduction in the parasitic series resistances, caused by doping the device channel.Keywords
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