AlGaN-GaN heterostructure FETs with offset gatedesign
- 3 July 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (14) , 1255-1257
- https://doi.org/10.1049/el:19970818
Abstract
The DC performance of AlGaN-GaN heterojunction field effect transistors (HFETs) with an offset gate design is reported for the first time. The breakdown voltage for these offset gate devices exhibited a strong dependence on the gate-to-drain separation and the maximum transconductance increased almost linearly with the source-to-gate distance.Keywords
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