The Effect of Photochemical Surface Passivation on Reverse Current in Ti-GaAs Schottky Diodes
- 1 March 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (3A) , L290
- https://doi.org/10.1143/jjap.27.l290
Abstract
The effect of photochemical surface passivation on Ti-GaAs diodes is demonstrated and discussed. The procedure described can be used to prepare a stable and repeatable GaAs surface for device processing. It is also compatible with lift-off technique.Keywords
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