Effects of hydrogen ion implantation on Al/Si Schottky diodes

Publisher Website
Google Scholar
Abstract
Al/Si(p) and Al/Si(n) Schottky diodes were implanted with hydrogen ions such that the peak of the hydrogen distribution was localized at the metal‐semiconductor interface. Current‐voltage (I‐V) measurements indicated more ohmic behavior in the Al/Si(n) and more rectifying behavior in the Al/Si(p) diodes. For both cases, annealing at 200 °C for 30 min caused the I‐V curves to almost revert to the pre‐implantation characteristics. A similar behavior was observed using the capacitance‐voltage (C‐V) measurement technique. No significant change of the hydrogen concentration or redistribution of the concentration was observed after the 200 °C heat treatment. Correlation between the hydrogen depth profiling data and the electrical measurements indicated that, as far as I‐V and C‐V were concerned, the implanted hydrogens were electrically inactive.