Permeable-base transistors with ion-implanted CoSi2 gate
- 20 January 1992
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 12 (1-2) , 157-160
- https://doi.org/10.1016/0921-5107(92)90278-h
Abstract
No abstract availableKeywords
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