ELECTRICAL CHARACTERISTICS OF EPITAXIAL GERMANIUM FILMS VACUUM DEPOSITED ON SEMI-INSULATING GaAs UP TO THICKNESSES OF 106 Å
- 1 April 1966
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 8 (7) , 164-166
- https://doi.org/10.1063/1.1754536
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Low-Pressure Sputtered Germanium FilmsJournal of Vacuum Science and Technology, 1965
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- Source of Acceptors in Low Resistivity Vacuum-Deposited Germanium FilmsJournal of Applied Physics, 1963
- Analysis of Thin-Film Germanium Epitaxially Deposited onto Calcium FluorideJournal of Applied Physics, 1963
- The effect of vacuum-evaporation parameters on the structural, electrical and optical properties of thin germanium filmsSolid-State Electronics, 1963
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962
- The Cause of Stress in Evaporated Metal FilmsProceedings of the Physical Society. Section B, 1954