The Structure of a-Si:H,F/a-Si,Ge:H,F Interfaces
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Properties of a‐Si,Ge:H,F alloys prepared by rf glow discharge in an ultrahigh vacuum reactorJournal of Vacuum Science & Technology A, 1986
- Infrared spectroscopy of interfaces in amorphous hydrogenated silicon/silicon nitride superlatticesApplied Physics Letters, 1986
- Electron and Hole Transport Perpendicular to the Planes of a-Si:H/ a-Si, Ge:H Compositional SuperlatticesMRS Proceedings, 1986
- Raman scattering study of amorphous Si-Ge interfacesPhysical Review B, 1985
- The hydrogen content of a-Ge:H and a-Si:H as determined by ir spectroscopy, gas evolution and nuclear reaction techniquesJournal of Non-Crystalline Solids, 1980
- Structural interpretation of the infrared and Raman spectra of glasses in the alloy systemPhysical Review B, 1974