The hydrogen content of a-Ge:H and a-Si:H as determined by ir spectroscopy, gas evolution and nuclear reaction techniques
- 1 January 1980
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 35-36, 255-260
- https://doi.org/10.1016/0022-3093(80)90603-1
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Vibrational spectrum of hydrogenated amorphous Si-C filmsPhysica Status Solidi (b), 1979
- Structural interpretation of the vibrational spectra of-Si: H alloysPhysical Review B, 1979
- Infrared absorption in hydrogenated amorphous and crystallized germaniumJournal of Non-Crystalline Solids, 1979
- Doping effects of Sb and Ga on evaporated amorphous GePhysica Status Solidi (a), 1979
- Hydrogenation and dehydrogenation of amorphous and crystalline siliconApplied Physics Letters, 1978
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Quantitative analysis of hydrogen in glow discharge amorphous siliconApplied Physics Letters, 1977
- Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputteringSolid State Communications, 1976
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Use of hydrogenation in structural and electronic studies of gap states in amorphous germaniumPhysical Review B, 1976