4H-SiC npn bipolar junction transistors with BV/sub CEO/ < 3,200 V

This publication has 3 references indexed in Scilit:

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  IEEE Transactions on Electron Devices, 2001
• 1800 V NPN bipolar junction transistors in 4H-SiC
  IEEE Electron Device Letters, 2001
• An implanted-emitter 4H-SiC bipolar transistor with high current gain
  IEEE Electron Device Letters, 2001