Excitons in SiO2: a review
- 1 October 1992
- journal article
- review article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 149 (1-2) , 32-45
- https://doi.org/10.1016/0022-3093(92)90052-l
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Temperature Dependence of Luminescence Decay Kinetics of Self‐Trapped Excitons, Germanium and Aluminium Centres in Crystalline QuartzPhysica Status Solidi (b), 1987
- Luminescence in Germanium-Doped Glassy SiO2Physica Status Solidi (a), 1984
- A new intrinsic defect in amorphous SiO2: Twofold coordinated siliconSolid State Communications, 1984
- Optical constants of crystalline and fused quartz in the far ultravioletApplied Optics, 1977
- Electron orbital energies of oxygen adsorbed on silicon surfaces and of silicon dioxidePhysical Review B, 1974
- Determination of optical interband transitions in crystalline quartz from X‐ray spectroscopical dataPhysica Status Solidi (b), 1972
- The band edge of amorphous SiO2 by photoinjection and photoconductivity measurementsSolid State Communications, 1971
- Temperature Effects on the Vacuum Ultraviolet Reflectance of α‐QuartzPhysica Status Solidi (b), 1968
- Optical transitions in crystalline and fused quartzSolid State Communications, 1966
- Ultraviolet reflectance of Al2O3, SiO2 and BeOSolid State Communications, 1964