The band edge of amorphous SiO2 by photoinjection and photoconductivity measurements
- 1 December 1971
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 9 (24) , 2259-2261
- https://doi.org/10.1016/0038-1098(71)90643-0
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Temperature dependence of the short wavelength transmittance limit of vacuum ultraviolet window materials—II theoretical, including interpretations for U.V. spectra of SiO2, GeO2, and Al2O3Journal of Physics and Chemistry of Solids, 1970
- The temperature dependence of the short wavelength transmittance limit of vacuum ultraviolet window materials—I. ExperimentJournal of Physics and Chemistry of Solids, 1969
- Temperature Effects on the Vacuum Ultraviolet Reflectance of α‐QuartzPhysica Status Solidi (b), 1968
- The Valence Bond Approximation in Crystals — Application to an Analysis of the Ultraviolet Spectrum in QuartzPhysica Status Solidi (b), 1968
- Optical transitions in crystalline and fused quartzSolid State Communications, 1966
- Intrinsic Photoconductivity in the Alkali HalidesPhysical Review B, 1966
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965
- Ultraviolet reflectance of Al2O3, SiO2 and BeOSolid State Communications, 1964
- Die Lichtabsorption von Quarzglas zwischen 1470 Å und 1750 ÅZeitschrift für Naturforschung A, 1956