Width-independent narrow nMOSFET reliability by split-well drive-in
- 1 May 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (5) , 224-226
- https://doi.org/10.1109/55.55257
Abstract
By splitting the well drive-in into two parts, before and after the field oxidation, it is possible to compensate the segregation effects due to field oxidation without having to increase the well concentration in the active areas. Due to the smaller dopant gradient between isolation and active areas, nearly neutral transistor-width dependence is achieved, resulting in width-independent transistor degradation behavior. Only in the case of threshold-voltage-adjustment directly by the p-well concentration is a weak reverse narrow-width effect observed. The reliability results show that the width effect on lifetime is turned eliminated. The lifetime reduction with decreasing transistor width, normally so critical for field-implanted devices, is not a problem.Keywords
This publication has 6 references indexed in Scilit:
- Drain-engineered hot-electron-resistant device structures: a reviewIEEE Transactions on Electron Devices, 1989
- Hot-carrier stressing damage in wide and narrow LDD NMOS transistorsIEEE Electron Device Letters, 1989
- Sloped-junction LDD (SJLDD) MOSFET structures for improved hot-carrier reliabilityIEEE Electron Device Letters, 1988
- Lateral extent of oxidation-enhanced diffusion of phosphorus in 〈100〉 siliconApplied Physics Letters, 1985
- Hot carriers in small geometry CMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- The lateral effect of oxidation on boron diffusion in 〈100〉 siliconApplied Physics Letters, 1979