Characterization of electron traps in n+ indium tin oxide on p-type InP solar cells
- 1 April 1982
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (4) , 3085-3087
- https://doi.org/10.1063/1.331055
Abstract
Three electron traps in n+ Indium Tin Oxide on p‐type InP solar cells have been analyzed for the first time by Deep Level Transient Spectroscopy technique. These traps are located in the p‐InP part of the solar cells. Their thermal signatures are E1 (320 meV, σ∼10−13 cm2), E2 (520 meV, σ∼10−9 cm2) and E3 (475 meV, σ∼10−13 cm3). Comparisons are made with previous data obtained on ‐type InP.This publication has 7 references indexed in Scilit:
- Deep Impurity Levels in InP LEC CrystalsJapanese Journal of Applied Physics, 1981
- Interaction of deep-level traps with the lowest and upper conduction minima in InPJournal of Applied Physics, 1980
- Evidence of trapping in device-quality liquid-phase-epitaxial In
1−
x
Ga
x
As
y
P
1−
y
Electronics Letters, 1979
- A study of the deep electron traps in semiconducting CdSJournal of Applied Physics, 1979
- Deep traps in ideal n-InP Schottky diodesElectronics Letters, 1978
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Photocapacitance Effects at a Cu2S–CdS HeterojunctionJournal of Applied Physics, 1972