Ohmic contacts to n-GaAs using low-temperature anneal
- 1 February 1981
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (2) , 1127-1129
- https://doi.org/10.1063/1.328842
Abstract
The low‐temperature alloying behavior of AuGe films deposited on n‐type GaAs substrates (N = 2×1018 cm−3) has been investigated. Ohmic contacts were obtained using a postdeposition anneal in reducing atmosphere (H2 15%, N2 85%) at 275 °C for 120 sec with contact resistivities of 2.5×10−5 W cm2. These contacts are highly reproducible and exhibit more stable high‐temperature aging characteristics and better surfaces than do the more conventional AuGe‐Ni‐alloyed contacts on n‐GaAs.This publication has 12 references indexed in Scilit:
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