Metal-semiconductor contacts for GaAs bulk effect devices
- 31 May 1967
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (5) , 381-383
- https://doi.org/10.1016/0038-1101(67)90037-8
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Microwave phenomena in bulk GaAsIEEE Transactions on Electron Devices, 1966
- Microwave oscillations in epitaxial layers of GaAsIEEE Transactions on Electron Devices, 1966
- Recent results with epitaxial GaAs Gunn effect oscillatorsProceedings of the IEEE, 1966
- C.W. X and K band radiation from GaAs epitaxial layersElectronics Letters, 1965
- Instabilities of Current in III–V SemiconductorsIBM Journal of Research and Development, 1964
- Influence of Arsenic Pressure on the Doping of Gallium Arsenide with GermaniumJournal of Applied Physics, 1960
- Technology of gallium arsenideSolid-State Electronics, 1960