Contact Lithography Modelling Using Statistical Experimental Designs
- 1 September 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (9R) , 1564-1577
- https://doi.org/10.1143/jjap.28.1564
Abstract
A Statistical Experimental Design Methodology has been applied to contact lithography modelling for GaAs technology. The AZ 4000 resists have been used with three thicknesses 1, 2 and 3 µm. A standard process with UV4 and UV3 exposures and a post exposure bake process with UV4 exposure have been modelled. Two optimisations of the UV4 process leading to vertical profiles and an optimization of the PEB process leading to a lift-off profile are presented.Keywords
This publication has 7 references indexed in Scilit:
- Surface cracking in gold-silicon alloysSolid-State Electronics, 1984
- Reduction of photoresist standing-wave effects by post-exposure bakeIEEE Transactions on Electron Devices, 1975
- Modeling projection printing of positive photoresistsIEEE Transactions on Electron Devices, 1975
- Characterization of positive photoresistIEEE Transactions on Electron Devices, 1975
- Optical lithographyIEEE Transactions on Electron Devices, 1975
- Simplex optimization of analytical chemical methodsAnalytical Chemistry, 1974
- Multi-Factor Experimental Designs for Exploring Response SurfacesThe Annals of Mathematical Statistics, 1957