High performance low temperature polysilicon thin film transistor using ECR plasma thermal oxide as gate insulator
- 1 August 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (8) , 301-303
- https://doi.org/10.1109/55.296223
Abstract
Electron cyclotron resonance (ECR) plasma thermal oxide has been investigated as a gate insulator for low temperature (/spl les/600/spl deg/C) polysilicon thin-film transistors based on solid phase crystallization (SPC) method. The ECR plasma thermal oxide films grown on a polysilicon film has a relatively smooth interface with the polysilicon film when compared with the conventional thermal oxide and it shows good electrical characteristics. The fabricated poly-Si TFT's without plasma hydrogenation exhibit field-effect mobilities of 80 (60) cm/sup 2//V/spl middot/s for n-channel and 69 (48) cm/sup 2//V/spl middot/s for p-channel respectively when using Si/sub 2/H/sub 6/(SiH/sub 4/) source gas for the deposition of active poly-Si films.Keywords
This publication has 9 references indexed in Scilit:
- Future trends for TFT integrated circuits on glass substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- H/sub 2//O/sub 2/ plasma on polysilicon thin-film transistorIEEE Electron Device Letters, 1993
- Oxidation of silicon in an oxygen plasma generated by a multipolar electron cyclotron resonance sourceJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Oxidation of silicon in an electron cyclotron resonance oxygen plasma: Kinetics, physicochemical, and electrical propertiesJournal of Vacuum Science & Technology A, 1990
- Mechanism of device degradation in n- and p-channel polysilicon TFTs by electrical stressingIEEE Electron Device Letters, 1990
- Polarity asymmetry of oxides grown on polycrystalline siliconIEEE Transactions on Electron Devices, 1988
- Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor depositionJournal of Applied Physics, 1986
- Characterization of thermally oxidized n+polycrystalline siliconIEEE Transactions on Electron Devices, 1985
- Electrical conduction and breakdown in oxides of polycrystalline silicon and their correlation with interface textureJournal of Applied Physics, 1982