Mechanism of device degradation in n- and p-channel polysilicon TFTs by electrical stressing
- 1 April 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (4) , 167-170
- https://doi.org/10.1109/55.61785
Abstract
The effects of electrical stress on hydrogenated n- and p-channel polysilicon thin-film transistors are discussed. The on-state caused the most significant degradation, whereas off-state and accumulation conditions resulted in negligible degradation. The on-state stress degraded the threshold voltage, trap state density, and subthreshold sharpness of both n- and p-channel devices toward perhydrogenated values, and the rates of degradation increased with stressing biases. The field-effect mobility and leakage current, however, were not degraded by stressing. The mechanism of device degradation may be attributed to the metastable creation of midgap states within the polysilicon channel, as opposed to gate dielectric charge trapping or interface state generation.Keywords
This publication has 11 references indexed in Scilit:
- Polysilicon thin film transistor for analogue circuit applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Small geometry effects in n- and p-channel polysilicon thin film transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Page-wide a-Si:H TFT arrays for electronic printing and copyingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low-pressure chemical vapor deposited amorphous silicon filmsJournal of Applied Physics, 1989
- Effects of trap-state density reduction by plasma hydrogenation in low-temperature polysilicon TFTIEEE Electron Device Letters, 1989
- Effects of temperature and electrical stress on the performance of thin-film transistors fabricated from undoped low-pressure chemical vapor deposited polycrystalline siliconApplied Physics Letters, 1989
- Role of hydrogen in the formation of metastable defects in hydrogenated amorphous siliconPhysical Review B, 1989
- Hot-electron-induced punchthrough (HEIP) effect in submicrometer PMOSFET'sIEEE Transactions on Electron Devices, 1987
- Completely integrated contact-type linear image sensorIEEE Transactions on Electron Devices, 1985
- Electrical breakdown in thin gate and tunneling oxidesIEEE Transactions on Electron Devices, 1985