High-field, Hall-effect spectroscopy applied ton-type germanium

Hall-effect data measured at high-magnetic-field strengths as a function of temperature have been used to demonstrate a new method for determining the concentration and energy spacing from the band edge of impurities in semiconducting materials not previously measurable from Hall-type experiments. Applied to antimony-doped, $n$-type germanium, three deep levels have been identified with the following concentrations and energy spacings below the conduction-band edge: (1.00±0.02) (${10}^{12}$)/${\mathrm{cm}}^3$ at 0.0590±0.005 eV, (1.37±0.02)(${10}^{12}$)/${\mathrm{cm}}^3$ at 0.0977±0.0005 eV, and (5.87±0.02) (${10}^{12}$)/${\mathrm{cm}}^3$ at 0.199±0.005 eV. The middle and deepest energies correspond to known Ag and Au levels, respectively. The shallowest value is newly reported here. The strong temperature dependence of the low-field, Hall-effect correction factors have been measured and shown to prevent similar analysis of low-magnetic-field data. A new criterion has been developed to explain the temperatures needed to ionize specific impurity levels.