Energy Levels in Cobalt Compensated Silicon
- 1 December 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (13) , 5282-5285
- https://doi.org/10.1063/1.1658663
Abstract
Measurements of the temperature dependence of resistivity and Hall coefficient in cobalt‐doped silicon show a donor level 0.40 eV from the valence band and an acceptor level 0.53 eV from the conduction band. These levels appear to be due to different charge states of the same center. Absorption and photoconductivity measurements support these determinations. Closed tube diffusions of silicon wafers on which cobalt has been evaporated result in maximum concentrations of electrically active cobalt of about 3×1014 cm−3.This publication has 9 references indexed in Scilit:
- The properties of nickel in siliconProceedings of the IEEE, 1969
- Deep impurities in siliconMaterials Science and Engineering, 1967
- Energy Levels and Negative Photoconductivity in Cobalt-Doped SiliconPhysical Review B, 1966
- Impact ionization in cobalt-doped siliconProceedings of the IEEE, 1965
- Gold in Silicon: Effect on Resistivity and Diffusion in Heavily-Doped LayersJournal of the Electrochemical Society, 1964
- Double Injection Diodes and Related DI Phenomena in SemiconductorsProceedings of the IRE, 1962
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960
- Properties of Silicon and Germanium: IIProceedings of the IRE, 1958
- Properties of Silicon Doped with Iron or CopperPhysical Review B, 1957