Diffusion of Phosphorus in Silicon

Publisher Website
Google Scholar
Abstract
In a previous work by the author, it was reported that the anomalous diffusion of phosphorus in silicon can be explained well by the pair diffusion model under the assumptions that the vacancy formation energy decreases with increasing phosphorus concentration and the binding energy between a vacancy and a phosphorus atom is constant. However, the ground for these assumptions was not clear. In the present work, it is shown that the decrease in the vacancy formation energy is caused by the interaction between a vacancy and two nearby phosphorus atoms. Because of this interaction, the binding energy probably decreases with increasing phosphorus concentration. Thus the weak point of the previous work is solved. It is also shown that the diffusion equations developed for the pair diffusion model are general equations which include the ordinary diffusion model.

This publication has 14 references indexed in Scilit: