Design of a GaAs operational amplifier using a self-backgating MESFET model including deep-level trap effects
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- GaAs FET device and circuit simulation in SPICEIEEE Transactions on Electron Devices, 1987
- Supression of drain conductance transients, drain current oscillations, and low-frequency generation—Recombination noise in GaAs FET's using buried channelsIEEE Transactions on Electron Devices, 1986