Carrier Relaxation in (GaIn)As Quantum Dots
- 1 November 1997
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 164 (1) , 421-425
- https://doi.org/10.1002/1521-396x(199711)164:1<421::aid-pssa421>3.0.co;2-c
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effectsPhysical Review B, 1997
- Exciton relaxation dynamics in quantum dots with strong confinementPhysical Review B, 1996
- State filling and time-resolved photoluminescence of excited states in As/GaAs self-assembled quantum dotsPhysical Review B, 1996
- Optical transitions and carrier relaxation in self assembled InAs/GaAs quantum dotsJournal of Applied Physics, 1996
- Time Resolved Spectroscopy of Single Quantum Dots: Fermi Gas of Excitons?Physical Review Letters, 1996
- Recombination processes in strain-induced InGaAs quantum dotsIl Nuovo Cimento D, 1995
- Luminescence from excited states in strain-inducedAs quantum dotsPhysical Review B, 1995
- Carrier thermalization in sub-three-dimensional electronic systems: Fundamental limits on modulation bandwidth in semiconductor lasersPhysical Review B, 1994
- Electron relaxation in quantum dots by means of Auger processesPhysical Review B, 1992
- Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gasesPhysical Review B, 1990