ESR Study of Porous Silicon
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
A detailed ESR study has been performed on porous silicon on both and p-type silicon substrates prepared using anodization in HF under a range of conditions and the results are correlated with the light emission properties. It is found that the ESR spectra are dependent upon the orientation of the samples. The ESR defect centers are identified to be the Pb centers or Pbo centers of the Si-SiO2 system from the g-value anisotropy maps. The variation of the spin density Ns with annealing conditions has also been studied for samples annealed either in nitrogen or oxygen ambient at 200°C for various time intervals. It is concluded that the increase or decrease of Ns are due to the generation or elimination of the Pb or Pbo centers in conjunction with the oxidation process during annealing. From PL study of these samples, it is found that there is no simple correlation between the spin density and the PL intensity. However, a blue shift in the PL peak position was observed both in samples after a post-annealing etch in HF solution, and in samples annealed in oxygen without a post-annealing etch. This blue shift supports the quantum confinement model of light emission from porous silicon.Keywords
This publication has 10 references indexed in Scilit:
- Luminescence cycling and defect density measurements in porous silicon: Evidence for hydride based modelApplied Physics Letters, 1992
- Rapid-thermal-oxidized porous Si−The superior photoluminescent SiApplied Physics Letters, 1992
- Effects of thermal annealing on porous silicon photoluminescence dynamicsApplied Physics Letters, 1992
- Photoluminescence of porous Si, oxidized then deoxidized chemicallyApplied Physics Letters, 1992
- Luminescence degradation in porous siliconApplied Physics Letters, 1992
- The origin of visible luminescencefrom “porous silicon”: A new interpretationSolid State Communications, 1992
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Electron-spin-resonance study of radiation-induced paramagnetic defects in oxides grown on (100) silicon substratesJournal of Applied Physics, 1988
- Interface traps and P b centers in oxidized (100) silicon wafersApplied Physics Letters, 1986
- Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafersJournal of Applied Physics, 1981