Theory of Gain in Group-HI Nitride Lasers
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Valence band splittings and band offsets of AlN, GaN, and InNApplied Physics Letters, 1996
- Modeling of optical gain in InGaN-AlGaN and In/sub x/Ga/sub 1-x/N-In/sub y/Ga/sub 1-y/N quantum-well lasersIEEE Journal of Quantum Electronics, 1996
- Consistent structural properties for AlN, GaN, and InNPhysical Review B, 1995
- Semiconductor-Laser PhysicsPublished by Springer Nature ,1994
- Simple approach to self-energy corrections in semiconductors and insulatorsPhysical Review B, 1993
- Effective Bloch equations for semiconductorsPhysical Review B, 1988
- Optical band gap of indium nitrideJournal of Applied Physics, 1986
- Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasersJournal of Applied Physics, 1980
- The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor processApplied Physics Letters, 1978
- Fundamental energy gap of GaN from photoluminescence excitation spectraPhysical Review B, 1974