Modeling of optical gain in InGaN-AlGaN and In/sub x/Ga/sub 1-x/N-In/sub y/Ga/sub 1-y/N quantum-well lasers
- 1 May 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 32 (5) , 859-864
- https://doi.org/10.1109/3.493011
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Optical gain due to excitonic transitions in ZnCdSe/ZnMgSSe strained layer quantum well blue–green lasers: Prediction of low threshold under tensile strainApplied Physics Letters, 1995
- Excitons and electron-hole plasma in ZnCdSe/ZnSe quantum wellsPublished by SPIE-Intl Soc Optical Eng ,1994
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Optical properties near the band gap on hexagonal and cubic GaNApplied Physics Letters, 1994
- Gain and dynamics in ZnSe-based quantum wellsJournal of Crystal Growth, 1994
- InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN filmsJournal of Applied Physics, 1993
- Simple method for direct synthesis of YBa2Cu4O8 at atmospheric oxygen pressureApplied Physics Letters, 1993
- Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wellsApplied Physics Letters, 1990
- Stimulated Emission and Laser Action in Gallium NitrideApplied Physics Letters, 1971
- Recombination of Electrons and Donors in-Type GermaniumPhysical Review B, 1961