Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers

8 April 1991

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 58 (14) , 1512-1514
https://doi.org/10.1063/1.105162

Abstract

Using GaAs epilayers with arsenic precipitates (GaAs:As) as the photoconductive material in a broad-band optoelectronic terahertz beam system, we have generated and detected freely propagating, subpicosecond electromagnetic pulses. The receiver signal gave a measured integrated pulse width of 0.71 ps. Fast photoconductive rise times have been achieved which are characteristic of good mobility GaAs. In addition, the material exhibits a short ‘‘effective’’ carrier lifetime of several ps due to the embedded, closely spaced (about 20 nm) arsenic precipitates.

Keywords

This publication has 11 references indexed in Scilit:

Characterization of an optoelectronic terahertz beam system
IEEE Transactions on Microwave Theory and Techniques, 1990
High-brightness terahertz beams characterized with an ultrafast detector
Applied Physics Letters, 1989
Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures
Applied Physics Letters, 1989
Picosecond GaAs-based photoconductive optoelectronic detectors
Applied Physics Letters, 1989
Efficient generation of 480 fs electrical pulses on transmission lines by photoconductive switching in metalorganic chemical vapor deposited CdTe
Applied Physics Letters, 1989
Generation of subpicosecond electrical pulses on coplanar transmission lines
Applied Physics Letters, 1986
Subpicosecond electrooptic sampling: Principles and applications
IEEE Journal of Quantum Electronics, 1986
Picosecond photoconducting Hertzian dipoles
Applied Physics Letters, 1984
Picosecond photoresponse in 3He+ bombarded InP photoconductors
Applied Physics Letters, 1984
Impulse response of photoconductors in transmission lines
IEEE Journal of Quantum Electronics, 1983