Low-temperature sintered AuGe/GaAs ohmic contact
- 1 January 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (1) , 777-780
- https://doi.org/10.1063/1.329989
Abstract
Ohmic contacts with low specific-contact resistivity and with contact morphology superior to conventionally alloyed contacts have been made to n-type GaAs by sintering AuGe films on GaAs at 315 and 330 °C for several hours. The specific contact resistivities were found to decrease with sintering time and values as low as 3×10−6 Ω cm2 were obtained for contacts on GaAs (doped with silicon to a concentration of 1018 cm−3) after sintering at 330 °C for 1 h. Secondary Ion Mass Spectrometry profiling of the sintered films has been used to show that the ohmic contact formation is due to an enhanced diffusion of Ge into GaAs.This publication has 10 references indexed in Scilit:
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