Ion-assisted etching of silicon by SF6
- 15 June 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (12) , 1166-1168
- https://doi.org/10.1063/1.95746
Abstract
Sputtering of silicon by 3‐keV Ar+ ions in the presence of a molecular SF6 beam has been investigated by mass spectrometry and time‐of‐flight measurements. At temperatures below 100 K chemical reactions are induced between the silicon and an adsorbed layer of SF6 under ion bombardment leading to newly formed molecular products. The main products formed are SiFx’ (x=0–4) and a small amount of SiSFy compounds (y=0–2). The kinetic energies of these molecular species are for the major part in the 0.1‐eV region which excludes evaporation at substrate temperature to be a dominant mechanism for erosion. An effective sputtering yield for silicon of approximately 15 is obtained.Keywords
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