Quantitative determination of hydrogen in silicon-nitride films using proton-proton scattering
- 1 January 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (1) , 62-63
- https://doi.org/10.1063/1.91317
Abstract
The hydrogen profiles of silicon‐nitride films were measured using the p‐p scattering technique with 1.2‐MeV protons generated by a small accelerator. In plasma‐nitride layers, hydrogen concentrations on the order of 20 at.% were found compared to 7 at.% in low‐pressure CVD layers. The depth resolution was found to be 0.1 μm and a sensitivity limit of 10 ppm is estimated.Keywords
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