High efficiency AlGaAs/GaAs power HBTs at a low supply voltage for digital cellular phones
- 23 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10647775,p. 91-94
- https://doi.org/10.1109/gaas.1996.567746
Abstract
We present a high performance AlGaAs/GaAs power HBT with very low thermal resistance for digital cellular phones. Device structure with emitter air-bridge is utilized and device layout is optimized to reduce thermal resistance by three-dimensional thermal flow analysis, and in spite of a rather thick substrate (100 /spl mu/m), a low thermal resistance of 23/spl deg/C/W is achieved for a multi-finger (4/spl times/40 /spl mu/m/sup 2//spl times/40 fingers) HBT. This 40 finger HBT achieved power added efficiency (PAE) of over 53%, 29.1 dBm output power (Pout) and high associated gain (Ga) of 13.5 dB with 50 KHz adjacent channel leakage power (Padj) of less than 48 dBc under a 948 MHz /spl pi//4-shifted QPSK modulation with 3.4 V emitter-collector voltage.Keywords
This publication has 3 references indexed in Scilit:
- Bump heat sink technology - A novel assembly technology suitable for power HBTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Very high-power-density CW operation of GaAs/AlGaAs microwave heterojunction bipolar transistorsIEEE Electron Device Letters, 1993
- CW measurement of HBT thermal resistanceIEEE Transactions on Electron Devices, 1992