Bump heat sink technology - A novel assembly technology suitable for power HBTs
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 337-340
- https://doi.org/10.1109/gaas.1993.394439
Abstract
A novel assembly technique, bump heat sink (BHS), suitable for compound semiconductor power HBTs is proposed and demonstrated. In this technique, the heat generated in the transistor junction is effectively conducted away through a gold bump which is located on the top of each transistor unit. Using this technique, power transistors are demonstrated with power added efficiencies /spl eta//sub add/ of 74%, 66% and 61% for 5.0 W, 8.0 W and 10.0 W output CW, respectively, at 0.9 GHz with V/sub cc/=6 V. A three-stage HBT MMIC power amplifier for GSM class 4 is also demonstrated with /spl eta//sub add/ >55% at V/sub cc/=4 V CW operation.Keywords
This publication has 6 references indexed in Scilit:
- 4 W, 7-12 GHz, compact CB HBT MMIC power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High-efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHz Japanese digital cordless phonePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- CW measurement of HBT thermal resistanceIEEE Transactions on Electron Devices, 1992
- Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurementIEEE Transactions on Electron Devices, 1992
- High-performance carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by MOCVDElectronics Letters, 1991
- AlGaAs/GaAs Heterojunction Bipolar Transistors with 4W/mm Power Density at X-BandPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987