High-efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHz Japanese digital cordless phone
- 31 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A highly efficient personal hand phone (PHP) power amplifier monolithic microwave integrated circuit (MMIC) based on AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology is discussed. The amplifier operates at a supply voltage of only 3 V, and yet a power-added efficiency as high as 40% is achieved at a 1-dB compression point of 24 dBm. This is the highest power-added efficiency ever reported for such an amplifier operating at any voltage. The amplifier also has high linearity.<>Keywords
This publication has 2 references indexed in Scilit:
- 1W power amplifier MMICs for mm-wave applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- High-performance carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by MOCVDElectronics Letters, 1991