Characteristics of Bipolar Transistors with Various Depths of n+ Buried Layers Formed by High-Energy Ion Implantation
- 1 February 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (2R)
- https://doi.org/10.1143/jjap.31.156
Abstract
Bipolar transistors having n+ buried layers of various depths formed by high-energy ion implantation are investigated in order to obtain bipolar transistor of various performances in a single chip. The breakdown voltage between the emitter and the collector (B V CEO) values are controlled and decreased with increasing oxide thickness with high-energy ion implantation in Si dioxide films of varying thicknesses. The maximum B V CEO value obtained is 7.8 V. Base-collector leakage currents are very small when secondary defects are contained within the n+ buried layer. This method should be very effective for designing both BiCMOS and multifunction LSIs.Keywords
This publication has 1 reference indexed in Scilit:
- Secondary Defects in 2 MeV Phosphorus Implanted SiliconJapanese Journal of Applied Physics, 1986