Theoretical Investigations of Haynes' Rule

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Abstract
In a variety of semiconductors the binding energy EBX of excitons bound to ionized or neutral impurities shows a linear dependence on the ionization energy EIof the corresponding defect. This variation is described in the form of a generalized Haynes' rule,E EBX = A + BAI, and follows from first‐order perturbation theory with a short‐range potential. The constants A and B are calculated for ionized and neutral complexes as a function of σ = m/m. Good agreement of the theoretical results with experimental data is obtained.