Schottky barrier height of single-crystal nickel disilicide/silicon interfaces
- 1 November 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (9) , 4614-4617
- https://doi.org/10.1063/1.341239
Abstract
Nickel disilicide (NiSi2) was formed on Si(100) and Si(111) substrates by the codeposition of Ni and Si. The Schottky barrier height was about 0.65 eV for NiSi2 on Si(100), independent of NiSi2film thickness. By contrast, the Schottky barrier height for type‐B NiSi2 on Si(111) depended on NiSi2film thickness. Schottky barrier height decreased with increasing NiSi2film thickness. It became constant (0.65 eV) above 50‐nm‐thick NiSi2. The Schottky barrier height determined by extrapolating NiSi2film thickness to 1–2 layers of the NiSi2film was 0.78–0.79 eV.This publication has 13 references indexed in Scilit:
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