Growth and characterization of germanium and boron doped silicon epitaxial films
- 1 January 1988
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 17 (1) , 39-43
- https://doi.org/10.1007/bf02652231
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Stress-enhanced carrier mobility in zone melting recrystallized polycrystalline Si films on SiO2-coated substratesApplied Physics Letters, 1982
- A Method for the Measurement of Short Minority Carrier Diffusion Lengths in SemiconductorsJournal of Applied Physics, 1961
- Generation and Distribution of Dislocations by Solute DiffusionJournal of Applied Physics, 1961
- Piezoresistance Effect in Germanium and SiliconPhysical Review B, 1954