Stress-enhanced carrier mobility in zone melting recrystallized polycrystalline Si films on SiO2-coated substrates
- 15 February 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (4) , 322-324
- https://doi.org/10.1063/1.93077
Abstract
Thermal stress is found to have a significant influence on the carrier mobilities in Si films prepared by zone melting recrystallization of polycrystalline Si on SiO2‐coated substrates. Films recrystallized on SiO2‐coated fused quartz substrates exhibit a large tensile stress, which enhances the electron mobility by ∼75% compared to the stress‐free Si films recrystallized on SiO2‐coated Si substrates. In contrast, Si films recrystallized on SiO2‐coated sapphire substrates are under a large compressive stress, which yields an increase of ∼10% in hole mobility compared to the stress‐free films.Keywords
This publication has 6 references indexed in Scilit:
- n-channel deep-depletion metal-oxide-semiconductor field-effect transistors fabricated in zone-melting-recrystallized polycrystalline Si films on SiO2Applied Physics Letters, 1981
- MOSFET's on Silicon prepared by moving melt zone recrystallization of encapsulated polycrystalline Silicon on an insulating substrateIEEE Electron Device Letters, 1981
- Elastoresistance of n-type silicon on sapphireJournal of Applied Physics, 1974
- Mechanical and electrical properties of epitaxial silicon films on spinelSolid-State Electronics, 1968
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968
- Piezoresistance Effect in Germanium and SiliconPhysical Review B, 1954