Recombination Processes in Anodized Porous-Si as Studied by Optically-Detected Magnetic Resonance

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Abstract
Optically-detected magnetic resonance measurements at 1.6 K on anodized porous-Si are performed, in which the visible and infrared luminescence bands are separately monitored. The Si dangling-bond centers are detected and it is shown that these delects are dominantly linked with the infrared luminescence process providing a competing nonradiative channel. The observed anisotropy of the resonance signal reflects the crystalline environment of the region giving rise to the infrared luminescence. The defect is found to have a negligible interaction with the visible recombination process so that the carriers responsible for this light emission are suggested to be localized in a structurally different region from the infrared-emitting one.