Spin-dependent effects in porous silicon
- 23 November 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (21) , 2569-2571
- https://doi.org/10.1063/1.108129
Abstract
Luminescent anodically etched porous silicon is studied with electron spin resonance, optically detected magnetic resonance, and spin-dependent photoconductivity. The Pb center, the silicon dangling bond at the crystalline Si/SiO2 interface, is found to be the dominant paramagnetic defect, influencing both photoconductivity and photoluminescence. The assignment is supported by the observation of the corresponding 29Si hyperfine lines. A second hyperfine split pair is attributed to Si-F complexes formed during the etching process and remaining in the porous material.Keywords
This publication has 19 references indexed in Scilit:
- Visible light emission at room temperature from partially oxidized amorphous siliconSolid State Communications, 1992
- Luminescence degradation in porous siliconApplied Physics Letters, 1992
- The origin of visible luminescencefrom “porous silicon”: A new interpretationSolid State Communications, 1992
- Visible electroluminescence from porous siliconApplied Physics Letters, 1992
- Current-induced light emission from a porous silicon deviceIEEE Electron Device Letters, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Spin-dependent and localisation effects at Si/SiO2device interfacesSemiconductor Science and Technology, 1989
- Efficient visible photoluminescence in the binary a-Si:Hx alloy systemApplied Physics Letters, 1983
- Spin polarization effects in the photoconductivity of a-Si:HAIP Conference Proceedings, 1981