Visible light emission at room temperature from partially oxidized amorphous silicon
- 31 August 1992
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 83 (7) , 461-464
- https://doi.org/10.1016/0038-1098(92)90039-c
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- The origin of visible luminescencefrom “porous silicon”: A new interpretationSolid State Communications, 1992
- Visible electroluminescence from porous siliconApplied Physics Letters, 1992
- Electroluminescence in the visible range during anodic oxidation of porous silicon filmsApplied Physics Letters, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Anodic Oxidation of Hydrogenated Amorphous Silicon and Properties of OxideJournal of the Electrochemical Society, 1988
- Structural and Electronic Disorder in Boron, Nitrogen and Phosphorus Doped 50kHz PECVD a-Si:HMRS Proceedings, 1988
- Quantitative infrared characterization of plasma enhanced CVD silicon oxynitride filmsJournal of Non-Crystalline Solids, 1987
- rf-sputtered B-dopeda-Si:H anda-Si-B-H alloysPhysical Review B, 1986
- Infrared absorption spectra of SiO2 precipitates of various shapes in silicon: calculated and experimentalJournal of Applied Physics, 1980