Observation of an intrinsic5×5reconstruction on the clean Si(111) surface
- 15 June 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (18) , 13525-13528
- https://doi.org/10.1103/physrevb.39.13525
Abstract
Low-temperature annealing of the cleaved Si(111)2×1 surface revealed the existence of an intrinsic 5×5 reconstruction on the clean Si(111) surface. The electronic structure of the Si(111)5×5 surface, obtained with angle-resolved photoemission, is almost identical to that of the 7×7 reconstruction. This is strong evidence that the 5×5 reconstruction is also of the dimer–adatom–stacking-fault (DAS)-type. The experimental observation of a 5×5 reconstruction supports recent theoretical results that the 7×7 and 5×5 DAS models are very close in total surface energy.Keywords
This publication has 15 references indexed in Scilit:
- Model for the energetics of Si and Ge (111) surfacesPhysical Review B, 1987
- Surface electronic structure of Si(111)7×7-Ge and Si(111)5×5-Ge studied with photoemission and inverse photoemissionPhysical Review B, 1987
- Absence of large compressive stress on Si(111)Physical Review Letters, 1987
- Theoretical calculations for the dimer–adatom–stacking-fault model of Si(111)-7×7 surfaceJournal of Vacuum Science & Technology A, 1987
- Si(111)-7×7 surface: Energy-minimization calculation for the dimer–adatom–stacking-fault modelPhysical Review B, 1987
- New Reconstructions on Silicon (111) SurfacesPhysical Review Letters, 1986
- Origin of surface states on Si(111)(7×7)Physical Review Letters, 1986
- Total-energy calculations on the Takayanagi model for the Si(111) 7×7 surfaceJournal of Vacuum Science & Technology B, 1986
- Surface Electronic Structure of Si (111)-(7×7) Resolved in Real SpacePhysical Review Letters, 1986
- Well-Known "Surface State" on Si(111)2×1 Identified as a Bulk ContributionPhysical Review Letters, 1984